Plasma-wall interactions in dual frequency narrow-gap reactive ion etching system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6899-6905

  Morishita, Satoshi ^a   Hayashi, Hisataka ^a   Tatsumi, Tetsuya ^a   Hlkosaka, Yukinobu ^a   Noda, Shuichi ^a   Okigawa, Mitsuru ^a   Matsui, Miyako ^a   Inoue, Masami ^a   Sekine, Makoto ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

C4F8; Contact hole; Dry etching; Ion; Plasma; Radical; SiO2

Indexed keywords

EID: 0000264949     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6899     Document Type: Article

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