Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiO x:H films

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 1906-1913

  San Andres E ^a   Del Prado, A ^a   Martil I ^a   Gonzalez Diaz G ^a   Bravo, D ^b   Lopez F J ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION MEASUREMENTS; ANNEALING TEMPERATURES; BONDING CONFIGURATIONS; DEFECT CONCENTRATIONS; DEFECT CONTENTS; DEFECT-FREE; DENSITY OF DEFECTS; ELECTRON SPIN RESONANCE MEASUREMENTS; FILM COMPOSITION; HIGH QUALITY; HIGHER TEMPERATURES; HYDROGEN EVOLUTION; HYDROGEN RELEASE; INITIAL FILM; OXYGEN TO SILICON RATIO; PARAMAGNETIC DEFECTS; SI NANOCRYSTAL; SILICON DANGLING BOND; THERMALLY INDUCED; WAVE NUMBERS;

ACTIVATION ENERGY; ANNEALING; DEFECTS; HYDROGEN; PARAMAGNETISM; SILICON;

SILICON OXIDES;

EID: 0037103448     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495068     Document Type: Article

References (31)

1. B. J. Hinds, F. Wang, D. M. Wolfe, C. L. Hinkle, and G. Lucovsky, J. Vac. Sci. Technol. B 16, 2171 (1998). jvb JVTBD9 0734-211X
2. K. Furukawa, Y. Liu, H. Nakashima, D. Gao, K. Uchino, K. Muraoka, and H. Tsuzuki, Appl. Phys. Lett. 72, 725 (1998). apl APPLAB 0003-6951
3. G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. S. Urdahl, Appl. Phys. Lett. 73, 1517 (1998). apl APPLAB 0003-6951
4. H.-S. Kim, IEEE Electron Device Lett. 18, 465 (1997). edl EDLEDZ 0741-3106
5. Q. X. Jia, J. L. Smith, L. H. Chang, and W. A. Anderson, Philos. Mag. B 77, 1163 (1997). pmb PMABDJ 0141-8637
6. G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J. C. Philips, Appl. Phys. Lett. 74, 2005 (1999). apl APPLAB 0003-6951
7. G. Lucovsky, J. Non-Cryst. Solids 1, 227 (1998). jnc JNCSBJ 0022-3093
8. F. Rochet, G. Dufour, H. Roulet, B. Pelloie, J. Perrière, E. Fogarassy, A. Slaoui, and M. Froment, Phys. Rev. B 37, 6468 (1988). prb PRBMDO 0163-1829
9. C.-F. Lin, W.-T. Tseng, and M. Shiann Feng, J. Appl. Phys. 87, 2808 (2000). jap JAPIAU 0021-8979
10. G. Franzò, A. Irrera, E. C. Moreira, M. Miritello, F. Iacona, D. Sanfilippo, G. Di Stefano, P. G. Fallica, and F. Priolo, Appl. Phys. A: Mater. Sci. Process. 74, 1 (2002). mfc APAMFC 0947-8396
11. U. Kahler and H. Hofmeister, Appl. Phys. A: Mater. Sci. Process. 74, 13 (2002). mfc APAMFC 0947-8396
12. E. San Andrés, A. del Prado, I. Mártil, G. González-Díaz, F. L. Martínez, D. Bravo, and F. J. López, Vacuum (to be published).
13. R. C. Barklie, M. Collins, M. Richardson, and I. Borde, J. Mater. Sci.: Mater. Electron. 12, 231 (2001). eev JSMEEV 0957-4522
14. A. Borghesi, A. Sassella, B. Pivac, and L. Zanotti, Solid State Commun. 100, 657 (1996). ssc SSCOA4 0038-1098
15. E. San Andrés, A. Del Prado, F. L. Martinez, I. Mártil, D. Bravo, and F. J. López, J. Appl. Phys. 87, 1187 (2000). jap JAPIAU 0021-8979
16. F. L. Martinez, A. Del Prado, I. Mártil, G. González Díaz, W. Bohne, W. Fuhs, J. Rörich, B. Selle, and I. Sieber, Phys. Rev. B 63, 245320 (2001). prb PRBMDO 0163-1829
17. P. V. Bulkin, P. L. Swart, and B. M. Lacquet, J. Non-Cryst. Solids 58, 226 (1998). jnc JNCSBJ 0022-3093
18. D. V. Tsu, G. Lucovsky, and B. N. Davidson, Phys. Rev. B 40, 1795 (1989). prb PRBMDO 0163-1829
19. F. L. Martinez, E. San Andrés, A. Del Prado, I. Mártil, D. Bravo, and F. J. López, J. Appl. Phys. 90, 1573 (2001). jap JAPIAU 0021-8979
20. G. Lucovsky, J. Yang, S. S. Chao, J. E. Tyler, and W. Czubatyj, Phys. Rev. B 28, 3225 (1983). prb PRBMDO 0163-1829
21. M. Zacharias, D. Dimova-Malinovska, and M. Stutzmann, Philos. Mag. B 73, 799 (1996). pmb PMABDJ 0141-8637
22. G. Lucovsky, Solid State Commun. 29, 571 (1979). ssc SSCOA4 0038-1098
23. A. A. Langford, M. L. Fleet, B. P. Nelson, W. A. Lanford, and N. Maley, Phys. Rev. B 45, 13367 (1992). prb PRBMDO 0163-1829
24. H. Nakashima, K. Furukawa, Y. C. Liu, D. W. Gao, Y. Kashiwazaki, K. Muraoka, K. Shibata, and T. Tsurushima, J. Vac. Sci. Technol. A 15, 1951 (1997). jva JVTAD6 0734-2101
25. P. M. Lenahan and J. F. Conley Jr., J. Vac. Sci. Technol. B 16, 2134 (1998). jvb JVTBD9 0734-211X
26. T. Inokuma, L. He, Y. Kurata, and S. Hasegawa, J. Electrochem. Soc. 142, 2346 (1995). jes JESOAN 0013-4651
27. M. J. Uren, J. H. Stathis, and E. Cartier, J. Appl. Phys. 80, 3915 (1996). jap JAPIAU 0021-8979
28. E. San Andrés, A. del Prado, I. Mártil, G. González-Díaz, F. L. Martínez, D. Bravo, F. J. López, and M. Fernández, Vacuum (to be published).
29. F. L. Martínez, A. del Prado, I. Mártil, D. Bravo, and F. J. López, J. Appl. Phys. 88, 2149 (2000). jap JAPIAU 0021-8979
30. K. Furukawa, Y. Liu, H. Nakashima, D. Gao, K. Uchino, K. Muraoka, and H. Tsuzuki, Appl. Phys. Lett. 72, 725 (1998). apl APPLAB 0003-6951
31. M. López, B. Garrido, C. García, P. Pellegrino, A. Pérez-Rodríguez, J. R. Morante, C. Bonafos, M. Carrada, and A. Claverie, Appl. Phys. Lett. 80, 1637 (2002). apl APPLAB 0003-6951