Si-H bonding configuration in SiOx : N,H films deposited by chemical vapor deposition

Solid State Communications

Volumn 100, Issue 9, 1996, Pages 657-661

  Borghesi, A ^a   Sassella, A ^b   Pivac, B ^c   Zanotti, L ^d  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF MILAN   (Italy)

^c RUDER BO KOVI INSTITUTE   (Croatia)

^d STMICROELECTRONICS   (Italy)

Author keywords

A. thin films; D. optical properties; E. light absorption

Indexed keywords

ANNEALING; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; COMPOSITION; HYDROGEN BONDS; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; MATHEMATICAL MODELS; OPTICAL PROPERTIES; SILICA; SILICON;

ABSORPTION BAND; LORENTZIAN COMPONENTS; RANDOM BONDING MODEL;

THIN FILMS;

EID: 0030395605     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00482-6     Document Type: Article

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