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Journal of Materials Science: Materials in Electronics

Volumn 12, Issue 4-6, 2001, Pages 231-234

An electron paramagnetic resonance study of defects in PECVD silicon oxides

(4) Barklie, R C a Collins, M a Richardson, M b Borde, I b

a TRINITY COLLEGE DUBLIN (Ireland)

b LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; PARAMAGNETIC RESONANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICA; SILICON WAFERS; THERMAL EFFECTS;

ANNEAL TEMPERATURE; AVERAGE TOTAL SPIN CONCENTRATION; PARAMAGNETIC DEFECT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035299962 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1011255202813 Document Type: Article

Times cited : (3)

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