Dynamic investigation of electron trapping and charge decay in electron-irradiated Al2O3 in a scanning electron microscope: Methodology and mechanisms

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 197, Issue 1-2, 2002, Pages 114-127

  Fakhfakh, S ^a,b   Jbara, Omar ^a   Belhaj, M ^c   Fakhfakh, Z ^b   Kallel, A ^b   Rau, E I ^d  

^a CNRS   (France)

^b Faculté des Sciences de Sfax   (Tunisia)

^c UNIVERSITÉ BORDEAUX 1   (France)

^d MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRIC INSULATORS; ELECTRON EMISSION; ELECTRON IRRADIATION; PARTIAL DISCHARGES; SCANNING ELECTRON MICROSCOPY; VACUUM;

DISPLACEMENT CURRENT METHODS;

ELECTRON TRAPS;

EID: 0036859197     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01331-9     Document Type: Article

References (54)

1. Clarke D.R., Stuart P.R. J. Phys. E. Sci. Instrum. 3:1970;705.
2. Joy D.C. Scanning. 11:1989;1.
3. Belhaj M., Jbara O., Odof S., Msellak K., Rau E.I., Andrianov M.V. Scanning. 22:2000;352.
4. Cummings K.D. J. Vac. Sci. Technol. B. 8:1990;1786.
5. Nakasugi T., Magoshi S., Sugihara K., Saito S., Kihara N. Jpn. J. Appl. Phys. 37:1998;6756.
6. Sessler G.M., West J.E. Appl. Phys. Lett. 71:1970;507.
7. Gong H., Taijing Lu, Ong C.K. J. Appl. Phys. 76:1994;1352.
8. Gong H., Le Gressus C., Oh K.H., Ding X.Z., Ong C.K., Tan B.T.G. J. Appl. Phys. 74:1993;1944.
9. Vallayer B., Blaise G., Treheux D. Rev. Scien. Instrum. 70:1999;3102.
10. Vallayer B., Saito Y., Théheux D. Vide: Sci. Tech. Appl. 275:1995;589.
11. Fayeulle S., Berroug H., Hamzaoui B., Thréheux D. Wear. 162-164:1993;906.
12. Damak N., Kallel A., Fakhfakh Z. Ann. Chim. Sci. Mat. 23:1998;255.
13. Ong C.K., Song Z.G., Oh K.H., Gong H., Le Gressus C. Appl. Phys. Lett. 72:1998;317.
14. Vigouroux J.P., Duraud J.P., Le moel A., Le Gressus C., Griscom D.L. J. Appl. Phys. 57:1985;5139.
15. Bigarré J., Fayeule S., Paulhe O., Tréheux D. IEEE Tran. Dielectr. Electr. Insul. Annual Report - Conference on Electrical Insulation and Dielectric Phenomena. 1997;101.
16. Berroug A., Bigarré J., Fayeule S., Tréheux D. IEEE Tran. Dielectr. Electr. Annual Report - Conference on Electrical Insulation and Dielectric Phenomena. 1997;97.
17. Liebault J., Vallayer J., Goeuriot D., Tréheux D., Thevenot F. J. Eur. Ceram. Soc. 21:2001;389.
18. Song Z.G., Ong C.K., Gong H. J. Appl. Phys. 79:1996;7123.
19. Reimer L. Scanning Electron Microscopy, Physics of Image Formation and Microanalyses. 1985;Spinger, Berlin.
20. Seah M.P., Spencer S.J. Electr. Spectrosc. Rel. Phen. 109:2000;291.
21. Cazaux J. J. Appl. Phys. 85:1999;1137.
22. Wong W.K., Phang J.C.H., Thong J.T.L. Appl. Phys. Lett. 71:1997;1270.
23. Cazaux J. J. Appl. Phys. 59:1986;1418.
24. Bigarré J., Hourquebie P. J. Appl. Phys. 85:1999;7443.
25. Coelho R., Aladeniz B., Garros B., Acroute D., Mirebeau P. IEEE Tran. Dielectr. Electr. Insul. 6:1999;202.
26. Andrianov M.V., Rau E.I., Cazaux J., Jbara O., Belhaj M. Sur. Invest. 12:2000;9.
27. Jbara O., Belhaj M., Odof S., Msellak K., Rau E.I., Andrianov M.V. Rev. Sci. Instrum. 72:2001;1788.
28. Belhaj M., Jbara O., Filippov M.N., Rau E.I., Andrianov M.V. Appl. Surf. Sci. 177:2001;58.
29. Crisci A., Gosse B., Gosse J.P., Olivier-Duréault V. Eur. Phys. J. AP. 4:1998;107.
30. Wintle H.J. J. Appl. Phys. 81:1997;2682.
31. Asokan T., Sudarshan T.S. J. Appl. Phys. 75:1994;3715.
32. Pantel R., D' Avitaya F., Ged P., Bois D. Johari O. Proc. SEM Symposium 1982. Scanning Microscopy International, Chicago. II:1982;549.
33. Taniguchi J., Miyamoto I., Ohno N., Honda S. Nucl. Instr. and Meth. B. 121:1997;507.
34. Belhaj M., Odof S., Msellak K., Jbara O. J. Appl. Phys. 88:2000;2289.
35. Blaise G., Le Gressus C. J. Appl. Phys. 69:1991;6334.
36. Li C.R., Sudarshan T.S. J. Appl. Phys. 76:1994;3313.
37. Le Gressus C., Valin F., Henriot M., Gautier M., Duraud J.P., Sudarshan T.S., Bommakanti R.G., Blaise G. J. Appl. Phys. 69:1991;6325.
38. Neuber A., Butcher M., Hatfield L.L., Krompholz H. J. Appl. Phys. 85:1999;3084.
39. Plasksin O.A., Stepanov V.A., Stepanov P.A., Chernov V.M. J. Nucl. Mater. 271-272:1999;496.
40. Klaffky R.W., Rose B.H., Goland A.N., Dienes G.J. Phys. Rev. B. 21:1980;3610.
41. Blaise G. J. Elec. 50:2001;69.
42. Joy D.C., Joy C.S. Micros. Microanal. 4:1999;475.
43. Shih A., Yater J.E., Hor C., Abrams R. Appl. Surf. Sci. 111:1997;251.
44. Yater J.E., Shih A. J. Appl. Phys. 87:2000;8103.
45. Oh K.H., Le Gressus C., Gong H., Ong C.K., Tan B.T.G., Ding X.Z. J. Appl. Phys. 74:1993;1250.
46. Kotera M., Suga H. J. Appl. Phys. 63:1988;261.
47. Kanaya K., Okayama S. J. Phys. D. 5:1972;43.
48. Danilatos G.D. Adv. Electron. Electron. Phys. 71:1988;109.
49. Stokes D.J., Thiel B.L., Donald A.M. Langmuir. 14:1998;4402.
50. G.M. Sessler, G.M. Yang, CSC'3 Proceedings SFV (1998) 38.
51. Chinaglia D.L., Hessel R., Oliveira O.N. Jr. Polym. Degrad. Stabil. 74:2001;97.
52. J.I. Goldstein, D.E. Newbury, P. Echlin, D.C. Joy, A.D. Romig, C.E. Lyman, C. Fiori, E. Lifshin, Scanning Electron Microscopy and X-Ray Microanalysis, Plenum, New York, 1992, Chapter 3.
53. O. Jbara, S. Fakhfakh, M. Belhaj, J. Cazaux, E.I. Rau, M. Filippov, M.V. Andrianov, Nucl. Instr. and Meth. B 194 (2002) 302.
54. Smythe C.P. Static and Dynamic Electricity. 1950;McGraw Hill, New York. [E. Durand, Electrostatics, Vol. 3, Masson, Paris (1966)].