Charge-reducing effect of chemically amplified resist in electron-beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6756-6760

  Nakasugi, Tetsuro ^a   Magoshi, Shunko ^a   Sugihara, Kazuyoshi ^a   Saito, Satoshi ^a   Kihara, Naoko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Charging; Chemically amplified resist; Electron beam lithography; Placement error

Indexed keywords

EID: 0000061654     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6756     Document Type: Article

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