Growth of Si and Ge nanostructures on Si substrates using ultrathin SiO2 technology

IEEE Journal of Quantum Electronics

Volumn 38, Issue 8, 2002, Pages 988-994

  Ichikawa, Masakazu ^a,b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON BEAMS; ELECTRON MICROSCOPY; FILM GROWTH; IRRADIATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICA; ULTRATHIN FILMS;

SCANNING REFLECTION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 0036685734     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.800972     Document Type: Article

References (26)

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4. Vertically self-organized InAs quantum box islands on GaAs(001)
5. Self-organization in growth of quantum dot superlattices
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7. Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with regular ripples
8. Lithographic positioning of self-assembled Ge islands on Si(001)
9. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
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12. Development of a multifunctional surface analysis system based on a nanometer scale scanning electron beam
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14. 2/Si induced by electron beams
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21. 2 coverage
22. 2 surfaces to the tip of a scanning tunneling microscope
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25. 2 films
26. Embedding of nanoscale 3D SiGe islands in a Si matrix