The nanometer-scale selective overgrowth of Ge over Si islands on Si(0 0 1) windows in ultrathin SiO2 films

Surface Science

Volumn 496, Issue 1-2, 2002, Pages L7-L12

  Nitta, Yoshiki ^a,b   Shibata, Motoshi ^a,c   Fujita, Ken ^a,b   Ichikawa, Masakazu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c PANASONIC CORPORATION   (Japan)

Author keywords

Epitaxy; Germanium; Oxidation; Scanning tunneling microscopy; Silicon; Silicon oxides

Indexed keywords

EPITAXIAL GROWTH; PHOTOLUMINESCENCE; PYROLYSIS; SCANNING TUNNELING MICROSCOPY; SILICA; ULTRATHIN FILMS;

PHOTOLUMINESCENCE SPECTRA;

SEMICONDUCTING GERMANIUM;

EID: 0036133231     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01650-8     Document Type: Article

References (13)