Electron-beam-induced selective thermal decomposition of ultrathin SiO2 layers used in nanofabrication

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7777-7781

  Watanabe, Heiji ^a   Fujita, Shinobu ^a   Maruno, Shigemitsu ^a   Fujita, Ken ^a   Ichikawa, Masakazu ^a  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

Auger electron spectroscopy; Electron beam lithography; Electron stimulated desorption; Nanofabrication; Scanning reflection electron microscopy; Silicon oxide; Thermal decomposition; X ray photoelectron spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DESORPTION; ELECTRON BEAM LITHOGRAPHY; NANOTECHNOLOGY; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; SILICA; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BEAM IRRADIATION; ELECTRON STIMULATED DESORPTION (ESD); SCANNING REFLECTION ELECTRON MICROSCOPY (SREM);

SEMICONDUCTING FILMS;

EID: 0031368342     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7777     Document Type: Article

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