Nucleation along step edges during Si epitaxial growth on the Si(111) surface observed by STM

Surface Science

Volumn 380, Issue 1, 1997, Pages 66-74

  Fujita, Ken ^a   Kusumi, Yukihiro ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

Disilane; Gallium; Growth; Nucleation; Scanning tunneling microscopy; Silicon; Vicinal single crystal surfaces

Indexed keywords

CHEMICAL BEAM EPITAXY; EPITAXIAL GROWTH; GALLIUM; GRAIN BOUNDARIES; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SILANES; SINGLE CRYSTALS;

DISILANES; VICINAL SINGLE CRYSTAL SURFACES;

SILICON;

EID: 0031143316     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00018-6     Document Type: Article

References (21)

1. For example, see the Proceedings of the 5th International Symposium on Silicon Molecular Beam Epitaxy, Eds. Y. Shiraki, H. Ishiwara and T. Sakamoto, Jpn. J. Appl. Phys. 33 (1994) 2263.
2. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1985) 1502; K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, Surf. Sci. 164 (1985) 367.
3. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1985) 1502; K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, Surf. Sci. 164 (1985) 367.
4. W. Shimada and H. Tochihara, Surf. Sci. 311 (1994) 107.
5. U. Köhler, J.E. Demuth and R.J. Hamers, J. Vac. Sci. Technol. A 7 (1989) 2860.
6. M.G. Lagally, Jpn. J. Appl. Phys. 32 (1993) 1493.
7. B. Voigtländer and Th. Weber, Phys. Rev. B 54 (1996) 7709.
8. C. Pearson, M. Krueger and E. Ganz, Phys. Rev. Lett. 76 (1996) 2306.
9. U. Köhler, L. Andersohn and B. Dahlheimer, Appl. Phys. A 57 (1993) 491.
10. L. Andersohn, T. Berke, U. Köhler and B. Voigtländer, J. Vac. Sci. Technol. A 14 (1996) 312.
11. B.S. Meyerson, Appl. Phys. Lett. 48 (1986) 797.
12. H. Hirayama, T. Tatsumi and N. Aizaki, Appl. Phys. Lett. 52 (1988) 1484.
13. -2 using the sticking coefficient, 0.085, reported in Ref. [13].
14. B. Joyce, S. Mokler, J. Zhang, N. Ohtani, M.-H. Xie and J. Hartung, Proceedings of International Conference on Advanced Microelectronic Devices and Processing 1994 (Tohoku University, Sendai, 1994) p. 173.
15. A. Kawazu and H. Sakama, Phys. Rev. B 37 (1988) 2704.
16. S.K. Kulkarni, S.M. Gates, C.M. Greenlief and H.H. Sawin, Surf. Sci. 239 (1990) 26.
17. N.C. Bartelt, E.C. Williams, R.J. Phaneuf, Y. Yang and S. Das Sarma, J. Vac. Sci. Technol. A 7 (1989) 1898.
18. T. Hasegawa, M. Kohno, S. Hosaka and S. Hosoki, Phys. Rev. B 48 (1993) 1943.
19. R. Schwoebel, J. Appl. Phys. 40 (1969) 614.
20. R. Imbihl, J.E. Demuth, S.M. Gates and B.A. Scott, Phys. Rev. B 39 (1989) 5222.
21. Ph. Avouris and F. Bozso, J. Phys. Chem. 94 (1990) 2243.