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Volumn 514, Issue 1-3, 2002, Pages 19-26

Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage

Author keywords

Germanium; Growth; Nucleation; Photoluminescence; Quantum effects; Semiconductor semiconductor heterostructures; Silicon

Indexed keywords

GERMANIUM; HETEROJUNCTIONS; NUCLEATION; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; SURFACE PHENOMENA; ULTRATHIN FILMS;

EID: 0037055562     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01602-3     Document Type: Conference Paper
Times cited : (62)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.