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Surface Science
Volumn 514, Issue 1-3, 2002, Pages 19-26
Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage
(2)
Shklyaev, Alexander A
a
Ichikawa, Masakazu
b
a
JT RES CENTER FOR ATOM TECHNOLOGY
(
Japan
)
b
UNIVERSITY OF TOKYO
(
Japan
)
Author keywords
Germanium; Growth; Nucleation; Photoluminescence; Quantum effects; Semiconductor semiconductor heterostructures; Silicon
Indexed keywords
GERMANIUM; HETEROJUNCTIONS; NUCLEATION; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; SURFACE PHENOMENA; ULTRATHIN FILMS;
QUANTUM EFFECTS;
SILICA;
EID
:
0037055562
PISSN
:
00396028
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1016/S0039-6028(02)01602-3
Document Type
:
Conference Paper
Times cited : (
62
)
References (
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