Nanometer-scale germanium islands on Si(111) surface windows formed in an ultrathin silicon dioxide film

Applied Physics Letters

Volumn 72, Issue 3, 1998, Pages 320-322

  Shklyaev, Alexander A ^a   Shibata, Motoshi ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001315828     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120724     Document Type: Article

References (13)

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