Nanometer-scale Si selective epitaxial growth on Si surface windows in ultrathin oxide films fabricated using scanning tunneling microscopy

Applied Physics Letters

Volumn 73, Issue 15, 1998, Pages 2179-2181

  Shibata, Motoshi ^a   Nitta, Yoshiki ^a   Fujita, Ken ^a   Ichikawa, Masakazu ^a  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON BEAMS; ELECTRON EMISSION; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; PYROLYSIS; SCANNING TUNNELING MICROSCOPY; SILICA; ULTRATHIN FILMS;

FIELD EMISSION; OXIDE FILMS; SILICON SURFACE WINDOWS;

SEMICONDUCTING SILICON;

EID: 0032511680     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122415     Document Type: Article

References (12)

1. H. Hirayama, T. Tatsumi, and N. Aizaki, Appl. Phys. Lett. 52, 2242 (1988).
2. K. Fujita, H. Watanabe, and M. Ichikawa, Appl. Phys. Lett. 70, 2807 (1997).
3. S. Fujita, S. Maruno, H. Watanabe, and M. Ichikawa, J. Vac. Sci. Technol. A 15, 1493 (1997).
4. H. Watanabe, S. Fujita, S. Maruno, K. Fujita, and M. Ichikawa, Jpn. J. Appl. Phys., Part 1 36, 7777 (1997).
5. A. Shklyaev, M. Shibata, and M. Ichikawa, Appl. Phys. Lett. 72, 320 (1998).
6. K. Ueda, Jpn. J. Appl. Phys., Part 1 33, 1524 (1994).
7. N. Li, T. Yoshinobu, and H. Iwasaki, Jpn. J. Appl. Phys., Part 2 37, L995 (1998). They did a similar study of fabricating windows on an oxidized Si(001) surface, but not the growth part.
8. K. Fujita, Y. Kusumi, and M. Ichikawa, Surf. Sci. 380, 66 (1997).
9. H. Watanabe, K. Fujita, and M. Ichikawa, Appl. Phys. Lett. 72, 1987 (1998).
10. H. Watanabe, K. Fujita, and M. Ichikawa, Appl. Phys. Lett. 70, 1095 (1997).
11. M. Fehrenbacher, H. Raucsher, and R. J. Behm, Surf. Sci. 385, 123 (1997).
12. Vu Thien Binh, V. Semet, and N. Garcia, Appl. Phys. Lett. 65, 2493 (1994).