High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a coverage

Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 3, 2000, Pages 1540-1543

  Shklyaev, Alexander A ^a   Shibata, Motoshi ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001039972     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.1540     Document Type: Article

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