Electron-beam initiated transfer of Ge from Ge islands on SiO2 surfaces to the tip of a scanning tunneling microscope

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3370-3374

  Shklyaev, Alexander A ^a,b   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Electron beam; Ge; Nanostructure; SiO2; STM manipulation

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON BEAMS; EVAPORATION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICA;

DIELECTRIC SURFACES;

GERMANIUM;

EID: 0035328573     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3370     Document Type: Article

References (28)