Plasma-charging effects on submicron MOS devices

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1151-1157

  Tzeng, Pei Jer ^a   Chang, Yi Yuan Ian ^a   Yeh, Chun Chen ^a   Chen, Chih Chiang ^a   Liu, Chien Hung ^a   Liu, Mu Yi ^a   Wu, Bone Fong ^a   Chang Liao, Kuei Shu ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Amorphous silicon; Antenna; High dielectric constant material; MOS; Oxynitride; Plasma charging damage; Si3N4; Ta2O5

Indexed keywords

AMORPHOUS SILICON; COMPOSITION EFFECTS; ELECTRODES; GATES (TRANSISTOR); LEAKAGE CURRENTS; PERMITTIVITY; PLASMA APPLICATIONS; PLASMA DIODES; RELIABILITY; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CHARGING POLARITY DISTRIBUTION; GATE OXYNITRIDE; NITRIDATION; PLASMA CHARGING; SHUNT DIODES;

MOSFET DEVICES;

EID: 0036638423     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013270     Document Type: Article

References (22)

1. Oxide damage from plasma charging breakdown mechanism and oxide quality
2. Surface charging effects on etching profiles
3. A new model for thin oxide degradation from wafer charging in plasma etching
4. Plasma-charging damage: A physical model
5. Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing
6. Plasma process induced abnormal 1/f noise behavior in deep submicron MOSFETs
7. The effect of plasma etching induced gate oxide degradation on MOSFETs 1/f noise
8. Performance and reliability assessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted si substrates
9. High performance 20Å NO oxynitride for gate dielectric in deep subquarter micron CMOS technology
10. Ultrathin nitrogen-profile engineered gate dielectric films
11. A comprehensive study of suppression of boron penetration by amorphous-Si gate in p+-gate PMOS devices
12. Impact of gate microstructure on complementary metal-oxide-semiconductor transistor performance
13. 2O nitridation
14. Effect of MOS devices scaling on process induced gate charging
15. Plasma charging damage on ultrathin gate oxides
16. Ultra-thin gate oxides - Performance and reliability
17. Making silicon nitride a viable gate dielectric
18. 5 gate dielectrics with Tox.eq < 10Å
19. Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
20. 5
21. Low voltage tunneling in ultra-thin oxides: A monitor for interface states and degradation