Surface charging effects on etching profiles

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 57-60

  Murakawa, S ^a,b   Fang, Sychyi ^a   McVittie, J P ^a  

^a STANFORD UNIVERSITY   (United States)

^b JFE STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON DEVICES; PHOTOMASKS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE CHARGE;

ETCHING PROFILE; ION TRAJECTORIES; LOCAL ELECTRIC FIELD; NONUNIFORM PLASMA; POTENTIAL DIFFERENCE; SMALL FEATURES; SURFACE CHARGING; TRENCH ETCHING;

ETCHING;

EID: 84975379742     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307308     Document Type: Conference Paper

References (9)

1. T. Kure, Y Goto, H. Kawakami. and S. Tachi, Symp. on VLSI Technology Digest of Tech. Papers 49 (1992)
2. T. Arikado, K. Horioka, M. Sekine, H. Okano, and Y. Horiike, Jpn. J. Appl. Phys. 27(1), 95 (1988)
3. T. Morimoto, C. Takahashi, and S. Matsuo, Proc. Symp. on Dry Process 57 (1991)
4. D. Economou, and R. C. Alkire, J Electrochem. Soc. 135(4), 941 (1988)
5. J. C. Arnold, and H. H. Sawin, J. Appl. Phys. 70 (10), 5314 (1991)
6. S. G. Ingram, J. Appl. Phys. 68(2), 500 (1990)
7. S. Fang, and J. P. McVittie, IEEE Elec. Dev. Lett. 13, 347 (1992)
8. D. Dahl, and J. E. Delmore, The SIMION PC/PS2 User's Manual, (Idaho National Engineering Laboratory, Idaho Falls, ED, 1988)
9. A. McCarthy, and W. Lukazek, Proc. IEEE Conf. Microelectron Test Structure (Edinburgh, Scotland), 153 (1989)