Effect of MOS device scaling on process induced gate charging

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1997, Pages 7-10

  Alavi, Mohsen ^a   Jacobs, Steve ^a   Ahmed, Shahriar ^a   Chern, Chan Hong ^a   McGregor, Paul ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; THERMAL EFFECTS;

P CHANNEL METAL OXIDE SEMICONDUCTOR (PMOS); PLASMA INDUCED GATE CHARGING DAMAGE; ULTRATHIN OXIDES;

MOSFET DEVICES;

EID: 0030676643     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)