Low-frequency noise characterizattion of latent damage in thin oxides subjected to high-field impulse stressing

IEEE Electron Device Letters

Volumn 19, Issue 10, 1998, Pages 363-366

  Chim, W K ^a,b   Yeo, B P ^b   Lim, P S ^b   Chan, D S H ^a,b  

^a IEEE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATICS; HOT CARRIERS; OXIDES; SIGNAL NOISE MEASUREMENT; STRESSES;

HIGH-FIELD IMPULSE STRESSING;

SEMICONDUCTOR DEVICES;

EID: 0032188466     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.720187     Document Type: Article

References (10)

1. A. Amerasekera and C. Duvvury, ESD in Silicon Integrated Circuits. Chichester, U.K.: Wiley, 1995, p. 181.
2. S. Aur, A. Chatterjee, and T. Polgreen, "Hot-electron reliability and ESD latent damage." IEEE Trans. Electron Devices, vol. 35. p. 2189, Dec. 1988.
3. G. L. Teh, W. K. Chim, Y. K. Swee, and Y. K. Co. "Spectroscopic photon emission measurements of n-channel MOSFET's biased into snapback breakdown using a continuous-pulsing transmission line technique," Semicond. Sci. Technol., vol. 12, p. 662, 1997.
4. P. J. McWhorter and P. S. Winokur, "Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide semiconductor transistors," Appl. Phys. Lett., vol. 48. no. 2, p. 133, 1986.
5. W. K. Chim and G. L. Teh. "Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress." Jpn. J. Appl. Phys., vol. 37, no. 4, p. 1671, 1998.
6. M. Aoki and M. Kato, "Hole-induced 1/f noise increase in MOS transistors." Electron Device Lett., vol. 17, p. 118, Mar. 1996.
7. M. H. Tsai and T. P. Ma. "1/f noise in hot-carrier damaged MOSFETs: Effects of oxide charge and interface traps," IEEE Electron Device Lett., vol. 14, p. 256, May 1993.
8. S. Christensson, I. Lundstrom, and C. Svensson, "Low frequency noise in MOS transistors - I. Theory." Solid-State Electron., vol. 11, p. 797, 1968.
9. F. N. Hooge. "1/f noise," Physica B, vol. 83, p. 14, 1976.
10. K. K. Hung. P. K. Ko, C. Hu, and Y. C. Cheng. "A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors." IEEE Trans. Electron Devices, vol. 37, p. 654, Mar. 1990.