Impact of gate microstructure on complementary metal-oxide-semiconductor transistor performance

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 9 A/B, 1997, Pages

  Yu, Bin ^a   Ju, Dong Hyuk ^b   Kepler, Nick ^b   King, Tsu Jae ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

Boron penetration; Gate depletion; Gate microstructure

Indexed keywords

BORON; CMOS INTEGRATED CIRCUITS; COMPOSITION EFFECTS; CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; GATES (TRANSISTOR); GRAIN BOUNDARIES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

MODIFIED GATE DOPING (MGD) EFFECTS;

MOSFET DEVICES;

EID: 5544226500     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1150     Document Type: Article

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