A new model for thin oxide degradation from wafer charging in plasma etching

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 61-64

  Fang, Sychyi ^a   Murakawa, S ^a,b   McVittie, J P ^a  

^a STANFORD UNIVERSITY   (United States)

^b JFE STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON DEVICES; PLASMA ETCHING;

COLLECTION AREAS; ETCHING DAMAGES; PLASMA MEASUREMENT; PLASMA NONUNIFORMITY; SPICE SIMULATIONS; SURFACE CHARGING; SURFACE CURRENT; TUNNELING CURRENT;

SILICON WAFERS;

EID: 84956123839     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307309     Document Type: Conference Paper

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