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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 256-264

Current status of models for transient phenomena in dopant diffusion and activation

(2) Pichler, P a Stiebel, D a

a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

Author keywords

Activation; Process simulation; Silicon; Transient diffusion

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DIFFUSION; INTERFACES (MATERIALS); ION IMPLANTATION; MATHEMATICAL MODELS; MOS DEVICES; MULTILAYERS; POINT DEFECTS; SEMICONDUCTING SILICON; VLSI CIRCUITS;

TRANSIENT PHENOMENA;

SEMICONDUCTOR DOPING;

EID: 0036136924 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00947-8 Document Type: Article

Times cited : (11)

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