Temperature- and time-dependence of boron-enhanced diffusion from evaporated- and ultra-low energy ion-implanted layers

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 3-8

  Agarwal, Aditya ^a   Gossmann, H J ^b   Eaglesham, D J ^b  

^a EATON CORPORATION   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; SUPERSATURATION; THERMAL EFFECTS;

BORON ENHANCED DIFFUSION; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0032681498     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-3     Document Type: Article

References (20)

1. National Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 1997).
2. H.-J. Gossmann, T. E. Haynes, P. A. Stolk, D. C. Jacobson, G. H. Gilmer, J. M. Poate, H. S. Luftman, T. K. Mogi, and M. O. Thompson, Appl. Phys. Lett. 71 (26), 3862 (1997).
3. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, and T. E. Haynes, J. Appl. Phys. 81 (9), 61 (1997).
4. Aditya Agarwal, H.-J. Gossmarm, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, T. E. Haynes, and Yu. E. Erokhin, Appl. Phys. Lett. 71, (21) 3141 (1997).
5. Aditya Agarwal, D. J. Eaglesham, H.-J. Gossmarm, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes, Y. E. Erokhin, and R. Simonton, IEDM Tech. Digest, 467 (1997).
6. Aditya Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes, and R. Simonton, Mater. Sci. Semicond. Proc. 1, 17 (1998).
7. Aditya Agarwal, H.-J. Gossmann, D. J. Eaglesham, S. B. Herner, A. T. Fiory, and T. E. Haynes, Appl. Phys. Lett., submitted Oct 25, 1998.
8. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
9. R. B. Fair and J. C. C. Tsai, J. Electrochem. Soc. 124, 1107 (1977).
10. J. Y. Huh, U. Gösele and T. Y. Tan, J. Appl. Phys. 78 (10), 5926 (1995).
11. H.-J. Gossmann, F. C. Unterwald, and H. S. Luftman, J. Appl. Phys. 73, 8237 (1993).
12. H.-J. Gossmann, A. M. Vredenberg, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, T. Boone, and J. M. Poate, J. Appl. Phys. 74, 3150 (1993).
13. -2 at 800°C, i.e. the diffusion length after a 3000s anneal is ≈ 1μm. If there were interstitial injection it would have reached the marker layers.
14. S. Solmi and M. Servidori, Sol. St Phenom. 1&2, 65 (1988).
15. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B 52, 16542 (1995).
16. C. S. Rafferty, B.Biegel, Z. Yu, M. G. Ancona, J. Bude, and R. W. Dutton, Proc. SYSPAD'98, Leuven, Belgium, Sept 24, 1998, p. 137.
17. L. Pelaz, private communication.
18. m clusters or the silicon boride phase. Unfortunately, these effects are not well understood at present
19. S. Dunham, S.Chakravarthi, and A. H. Gencer, IEDM Tech. Digest, 501 (1998)
20. A. Armigliato, D. Nobili, P. Ostoja, M. Servidori, and S. Solmi, in Semiconductor Silicon, edited by H. R. Huff and E. Sirtl, (Electrochemical Society, 1977).