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Volumn 568, Issue , 1999, Pages 123-134

Modeling of {311} defects

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; DISLOCATIONS (CRYSTALS); STRAIN;

EID: 0032685523     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-123     Document Type: Article
Times cited : (19)

References (29)
  • 8
    • 0346655653 scopus 로고    scopus 로고
    • edited by G. Srinivasan, C. Murthy, and S. Dunham The Electrochem. Soc., Pennington
    • M. Law and K. Jones, in Process Physics and Modeling in Semiconductor Technology, edited by G. Srinivasan, C. Murthy, and S. Dunham (The Electrochem. Soc., Pennington, 1996), pp. 374-378.
    • (1996) Process Physics and Modeling in Semiconductor Technology , pp. 374-378
    • Law, M.1    Jones, K.2
  • 17
    • 33751146624 scopus 로고    scopus 로고
    • PhD thesis, University of Florida, Gainesville, FL
    • J. Liu, PhD thesis, University of Florida, Gainesville, FL, 1997.
    • (1997)
    • Liu, J.1
  • 23
    • 0004875326 scopus 로고    scopus 로고
    • edited by G. Srinivasan, C. Murthy, and S. Dunham The Electrochem. Soc., Pennington
    • G. Hobler, in Process Physics and Modeling in Semiconductor Technology, edited by G. Srinivasan, C. Murthy, and S. Dunham (The Electrochem. Soc., Pennington, 1996), pp. 509-521.
    • (1996) Process Physics and Modeling in Semiconductor Technology , pp. 509-521
    • Hobler, G.1
  • 26


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.