Modeling and simulation of spatial dependent transient diffusion after BF 2 implantation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 13-14

  Hofler A ^a   Feudel, T ^a   Strecker, N ^a   Fichtner, W ^a,b   Suzuki, K ^c   Sasaki, N ^c   Kataoka, Y ^c   Gratsch F ^d  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

^c FUJITSU LABORATORIES LTD   (Japan)

^d EM Microelectronic   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; SOFTWARE ENGINEERING;

ACTIVATION EFFECT; BURIED LAYER; DOPANT ATOMS; HIGH DOSE; MODEL AND SIMULATION; SILICON CRYSTAL; SILICON SAMPLES; TRANSIENT DIFFUSION;

SEMICONDUCTOR DEVICES;

EID: 0007488407     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.1996.865250     Document Type: Conference Paper

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