Effects of implanted nitrogen on diffusion of boron and evolution of extended defects

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 425-430

  Park, Heemyong ^a   Ilderem, Vida ^a   Jasper, Craig ^a   Kaneshiro, Mike ^a   Christiansen, Jim ^a   Jones, Kevin S ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; MOSFET DEVICES; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

STRAIN INDUCED GETTERING; TRANSIENT ENHANCED DIFFUSION (TED);

ION IMPLANTATION;

EID: 0031353214     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-425     Document Type: Conference Paper

References (7)