A predictive model for transient enhanced diffusion based on evolution of {311} defects

Journal of Applied Physics

Volumn 81, Issue 2, 1997, Pages 631-636

  Gencer, Alp H ^a   Dunham, Scott T ^a  

^a Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL DEFECTS; DIFFERENTIAL EQUATIONS; ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; POINT DEFECTS; REACTION KINETICS; SILICON WAFERS;

INTERSTITIALS; KINETIC PRECIPITATION MODEL; OSTWALD RIPENING; TRANSIENT ENHANCED DIFFUSION;

DIFFUSION;

EID: 0030871558     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364204     Document Type: Article

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