An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 318-323

  Declemy A ^a   Oliviero, E ^a   Beaufort, M F ^a   Barbot, J F ^a   David, M L ^a   Blanchard, C ^a   Tessier, Y ^b   Ntsoenzok, E ^b  

^a UNIVERSITÉ DE POITIERS   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

Gettering; Infrared spectroscopy; Ion implantation; Silicon carbide; X ray diffraction

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; HELIUM; INTERFACES (MATERIALS); ION IMPLANTATION; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

INFRARED REFLECTIVITY (IRR); THERMAL ANNEALING;

SILICON CARBIDE;

EID: 0036136213     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00921-1     Document Type: Article

References (26)