Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen

Journal of Physics D: Applied Physics

Volumn 33, Issue 12, 2000, Pages 1551-1555

  Wang, Lianwei ^a   Huang, Jipo ^a   Duo, Xinzhong ^a   Song, Zhitang ^a   Lin, Chenglu ^a   Zetterling, Carl Mikael ^b   Östling, Mikael ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; ION IMPLANTATION; MORPHOLOGY; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCHOTTKY BARRIER DIODES; STRESSES; SURFACES;

CHANNELING; ELECTRICAL ISOLATION; ISOLATION EFFECT; WIDE BAND GAP SEMICONDUCTOR; X RAY ROCKING CURVE;

SILICON CARBIDE;

EID: 0033725917     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/12/317     Document Type: Article

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