A simple way to analyze infrared reflectivity spectra of p-type Hg0.78Cd0.22Te implanted in various conditions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 181-186

  Leveque P ^a   Declemy A ^a  

^a UNIVERSITÉ DE POITIERS   (France)

Author keywords

Defects; HgCdTe; Infrared spectroscopy; Ion implantation

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CRYSTAL DEFECTS; INFRARED SPECTROSCOPY; MERCURY COMPOUNDS;

FREE CARRIERS; INFRARED REFLECTIVITY SPECTROSCOPY; NUCLEAR ENERGY LOSS;

ION IMPLANTATION;

EID: 0343645389     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00543-6     Document Type: Article

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