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Volumn 33, Issue 1, 2000, Pages 2-9
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Study of the influence of oxygen on structural perfection of silicon single crystals by high-resolution X-ray diffraction and infrared absorption measurements
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Author keywords
[No Author keywords available]
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Indexed keywords
OXYGEN;
SILICON;
ABSORPTION;
ARTICLE;
ATOM;
CLUSTER ANALYSIS;
CRYSTAL;
CRYSTAL STRUCTURE;
CRYSTALLIZATION;
DETERIORATION;
GEOMETRY;
INFRARED RADIATION;
INTERMETHOD COMPARISON;
MEASUREMENT;
PURIFICATION;
RADIATION SCATTERING;
TEMPERATURE DEPENDENCE;
X RAY DIFFRACTION;
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EID: 0034480411
PISSN: 00218898
EISSN: None
Source Type: Journal
DOI: 10.1107/S0021889899010328 Document Type: Article |
Times cited : (6)
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References (17)
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