Helium implantation defects in SiC studied by thermal helium desorption spectrometry

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 223-228

  Oliviero, E ^a   Van Veen, A ^b   Fedorov, A V ^b   Beaufort, M F ^a   Barbot, J F ^a  

^a UNIVERSITÉ DE POITIERS   (France)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Desorption; Helium; Implantation; Silicon carbide

Indexed keywords

HELIUM IMPLANTATION; THERMAL HELIUM DESORPTION SPECTROMETRY;

ANNEALING; CRYSTAL DEFECTS; DESORPTION; ELECTRON TRAPS; HELIUM; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; SINGLE CRYSTALS;

SILICON CARBIDE;

EID: 0036136377     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00873-4     Document Type: Article

References (12)