Glancing incidence diffuse X-ray scattering studies of implantation damage in Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 399-409

  Nordlund, K ^a   Partyka, P ^b   Zhong, Y ^b   Robinson, I K ^b   Averback, R S ^b   Ehrhart, P ^c  

^a UNIVERSITY OF HELSINKI   (Finland)

^b University of Illinois at Urbana Champaign   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Amorphization; Defect; Defect clusters; Diffuse X ray scattering; Silicon

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; CONTINUUM MECHANICS; CRYSTAL DEFECTS; GALLIUM; HELIUM; ION BOMBARDMENT; RADIATION DAMAGE; SEMICONDUCTING SILICON; X RAY SCATTERING;

DIFFUSE X RAY SCATTERING; GLANCING INCIDENCE;

ION IMPLANTATION;

EID: 0032740036     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00546-1     Document Type: Article

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