Be- and Mg-ion implantation-induced damage in InSb

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 277-279

  Declemy A ^a   Sauvage, T ^b   Kotai, E ^c   Leveque P ^d   Abd El Ati, M I ^e  

^a UMR 6630 CNRS   (France)

^b Centre National de la Recherche Scientifique   (France)

^c WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^e Tanta University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CRYSTAL DEFECTS; ENERGY GAP; INFRARED SPECTROSCOPY; ION IMPLANTATION; LIGHT REFLECTION; MAGNESIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; X RAY DIFFRACTION ANALYSIS;

INFRARED REFLECTIVITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0342592257     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00121-9     Document Type: Article

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