Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si

Applied Physics Letters

Volumn 75, Issue 18, 1999, Pages 2791-2793

  Yoon, Mirang ^a   Larson, B C ^a   Tischler, J Z ^a   Haynes, T E ^a   Chung, J S ^a   Ice, G E ^a   Zschack, P ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001224175     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125151     Document Type: Article

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