X-ray rocking curve analysis of ion implanted mercury cadmium telluride

Journal of Electronic Materials

Volumn 26, Issue 6, 1997, Pages 600-605

  Williams, B L ^a   Robinson, H G ^a   Helms, C R ^a   Zhu, N ^b  

^a Stanford University   (United States)

^b Phillips Semiconductors   (United States)

Author keywords

Defects; Dislocations; HgCdTe; Ion implantation; Mercury cadmium telluride; Transmission electron microscopy (TEM); X ray diffraction

Indexed keywords

EID: 0007509752     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0201-x     Document Type: Article

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