Defects induced by high energy helium implantation in 4H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 218-222

  Beaufort, M F ^a   Oliviero, E ^a   David, M L ^a   Nomgaudyte, J ^b   Pranevicius, L ^b   Declemy A ^a   Barbot, J F ^a  

^a Laboratoire de Metallurgie Physique   (France)

^b VYTAUTAS MAGNUS UNIVERSITY   (Lithuania)

Author keywords

Defects; He; Ion implantation; SiC; TEM; Voids

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; HELIUM; HYDROGEN; ION IMPLANTATION; RECRYSTALLIZATION (METALLURGY); TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC RELOCATION; HELIUM IMPLANTATION;

SILICON CARBIDE;

EID: 0036136222     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00912-0     Document Type: Article

References (13)