Cavity formation and impurity gettering in He-implanted Si

Journal of Electronic Materials

Volumn 25, Issue 1, 1996, Pages 157-164

  Follstaedt, D M ^a   Myers, S M ^a   Petersen, G A ^a   Medernach, J W ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Gettering; He implanted; Ion implantation; Si

Indexed keywords

ANNEALING; GETTERS; HELIUM; IMPURITIES; ION IMPLANTATION; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

CAVITY MICROSTRUCTURES; CAVITY TRAPPING; GETTERING; THRESHOLD CONCENTRATION;

SILICON;

EID: 0029678913     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666190     Document Type: Article

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