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January
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J. Pan, M. Chen, J. Chyi, and T. Shih, "Strain-Compensated 1.3- m AlGaInAs Quantum-Well Lasers with Multiquantum Barriers at the Cladding Layers", IEEE Photonics Technology Letters, Vol. 11, No. 1, January 1999
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N. Iwai, T. Mukaihara, N. Yamanaka, K. Kumada, H. Shimizu, and A. Kasukawa, "High-Performance 1.3- m InAsP Strained-Layer Quantum-Well ACIS (Al-Oxide Confined Inner Stripe) Lasers", IEEE Journal Of Selected Topics In Quantum Electronics, Vol. 5, No. 3, May/June 1999.
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H. Shimizu, K. Kumada, N. Yamanaka, N. Iwai, T. Mukaihara, and A. Kasukawa, "1.3- m InAsP n-Type Modulation-Doped MQW Lasers Grown by Gas-Source Molecular Beam Epitaxy", IEEE Journal Of Selected Topics In Quantum Electronics, Vol. 5, No. 3, May/June 1999.
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12
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0032162675
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Y. Inaba, M. Kito, J. Ohya, M. Ishino, and Y. Matsui, "High Output-Power and Narrow Spectral-Linewidth Operation of 1.3- m Gain-Coupled DFB Laser with InAsP Buried Absorptive Grating", IEEE Photonics Technology Letters, Vol. 10, No. 9, September 1998
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M. Yamada, T. Anan, K. Tokutome, and S. Sugou, "High-Temperature Characteristics of 1.3- um InAsP-InAlGaAs Ridge Waveguide Lasers", IEEE Photonics Technology Letters, Vol. 11, No. 2, February 1999
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Charles W. Tu, W. G. Bi, Y. Ma, J. P. Zhang, L. W. Wang, and S. T. Ho, "A Novel Material for Long-Wavelength Lasers: InNAsP", IEEE Journal Of Selected Topics In Quantum Electronics, Vol. 4, No. 3, May/June 1998.
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M. R. Gokhale, J. Wei, P. V. Studenkov, H. Wang, and S. R. Forrest, "High-Performance Long-Wavelength InGaAsPN Quantum-Well Lasers", IEEE Photonics Technology Letters, Vol. 11, No. 8, August 1999
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Shunichi Sato and Shiro Satoh, "High-Temperature Characteristic in 1.3- m-Range Highly Strained GaInNAs Ridge Stripe Lasers Grown by Metal-Organic Chemical Vapor Deposition", IEEE Photonics Technology Letters, Vol. 11, No. 12, December 1999
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30 Jan. - 1 Febr.; S. Josè, CA, USA
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R. Paoletti, D. Bertone, A. Bricconi, R. Fang, L. Greborio, G. Magnetti, M. Meliga, "Comparison of Optical and Electrical Modulation Bandwidths in three different 1.55 μm InGaAsP Buried Laser Structures", SPIE'S International Symposia - Photonics West '96, pp. 296-305, 30 Jan. - 1 Febr. 1996, S. Josè, CA, USA
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august
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F. Delpiano, R. Paoletti, P. Audagnotto and R. Puleo, "High Frequency Modelling and Characterisation of High Performance DFB Laser Modules", IEEE Transaction on Components, Hybrids, and Manufacturing Technology, Part B, Vol. 17, No 3, pp. 412-417, august 1994
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H. Yamazaki, T. Anan, K. Kudo, S. Sugou, and T. Sasaki, "Planar-Buried-Heterostructure Laser Diodes with Oxidized AlAs Insulating Current Blocking", IEEE Journal Of Selected Topics In Quantum Electronics, Vol. 5, No. 3, May/June 1999.
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0032757689
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Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation
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W. Zhi Jie, C. Soo Jin, Z. Fan, W. X. Jie, W. Wei, and Wu R. Han, "Native-Oxidized InAlAs Blocking Layer Buried Heterostructure InGaAsP-InP MQW Laser for High-Temperature Operation", IEEE Photonics Technology Letters, Vol. 11, No. 1, January 1999
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On the degradation of InGaAsP/InP-based bulk lasers
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All-selective MOVPE-grown 1.3-m strained multi-quantum-well buried-heterostructure laser diodes
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March
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Y. Sakata, T. Hosoda, Y. Sasaki, S. Kitamura, M. Yamamoto, Y. Inomoto, and K. Komatsu, "All-Selective MOVPE-Grown 1.3- m Strained Multi-Quantum-Well Buried-Heterostructure Laser Diodes", IEEE Journal Of Quantum Electronics, Vol. 35, No. 3, March 1999
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Theoretical and experimental analysis of leakage current in InGaAsP BH lasers with p-n-p-n current blocking layers
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Y. Yoshida, H. Watanabe, K. Shibata, A. Takemoto, and H. Higuchi, "Theoretical and Experimental Analysis of Leakage Current in InGaAsP BH Lasers with p-n-p-n Current Blocking Layers", IEEE Journal Of Quantum Electronics, Vol. 35, No. 9, September 1999.
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I. M. P. Aarts and E. H. Sargent, "Above-Threshold Leakage in Semiconductor Lasers: An Analytical Physical Model", IEEE Journal Of Quantum Electronics, Vol. 36, No. 4, April 2000.
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Uncooled and directly modulated 1.3um DFB laser diode for serial 10Gb/s ethernet
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Munich, Germany
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G. Sakaino, Y. Hisa, K. Takagi, T. Aoyagi, T. Nishimura and E. Omura, "Uncooled and directly modulated 1.3um DFB laser diode for serial 10Gb/s Ethernet", Proc. ECOC 2000, Vol. 1, pp. 125-126, Munich, Germany
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J. K. White, C. Blaauw, P. Firth and P. Aukland, "85°C Investigation of Uncooled 10-Gb/s Directly Modulated InGaAsP RWG GC-DFB Lasers", IEEE Photon. Technol. Lett, Vol. 13, pp. 773-776, No. 8, August 2001
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0035740987
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100 °C, 10 Gb/s directly modulated InGaAsP DFB lasers for uncooled ethernet applications
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R. Paoletti, M. Agresti, G. Burns, G. Berry, D. Bertone, P. Charles, P. Crump, A. Davies, R.Y. Fang, R. Ghin, P. Gotta, M. Holm, C. Kompocholis, G. Magnetti, J. Massa, G. Meneghini, G. Rossi, P. Ryder, A. Taylor, P. Valenti and M. Meliga, "100 °C, 10 Gb/s directly modulated InGaAsP DFB lasers for uncooled Ethernet applications", post-deadline at European Conference on Optical Communication ECOC '2001, October 2001, Amsterdam (NL).
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European Conference on Optical Communication ECOC '2001, October 2001, Amsterdam (NL)
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Paoletti, R.1
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Meliga, M.21
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