A novel material for long-wavelength lasers: InNAsP

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 510-513

  Tu, Charles W ^{a,c,d,e,f,g,h}   Bi, W G ^a   Ma, Y ^b   Zhang, J P ^b   Wang, L W ^b   Ho, S T ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Northwestern University   (United States)

^c MCGILL UNIVERSITY   (Canada)

^d YALE UNIVERSITY   (United States)

^e LUCENT TECHNOLOGIES   (United States)

^f UNIVERSITY OF CALIFORNIA   (United States)

^g University of California San Diego ^*  (United States)

^h Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Bandgap bowing; Characteristic temperature; InNasP; Nitrogen incorporation; Semiconductor laser

Indexed keywords

ENERGY GAP; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

LONG WAVELENGTH LASERS;

SEMICONDUCTOR LASERS;

EID: 0032064434     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704110     Document Type: Article

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