1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

IEEE Photonics Technology Letters

Volumn 10, Issue 3, 1998, Pages 495-497

  Takemasa, Keizo ^a,b   Munakata, Tsutomu ^a,b   Kobayashi, Masao ^a,b   Wada, Hiroshi ^a,b   Kamijoh, Takeshi ^a,b  

^a IEEE   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Characteristic temperature; Semiconductor lasers; Strained quantum wells

Indexed keywords

ELECTRIC CURRENTS; ELECTRONS; HETEROJUNCTIONS; HIGH TEMPERATURE PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS;

ELECTRON STOPPER LAYERS (ESL); SEPARATE CONFINEMENT HETEROSTRUCTURES (SCH);

QUANTUM WELL LASERS;

EID: 3643063531     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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