On the degradation of InGaAsP/InP-based bulk lasers

Journal of Lightwave Technology

Volumn 17, Issue 12, 1999, Pages 2584-2594

  Kallstenius, Thomas ^a   Bäckström, Jakob ^b   Smith, Ulf ^a   Stoltz, Björn ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; ELECTRON BEAMS; HETEROJUNCTIONS; INDUCED CURRENTS; OPTICAL COMMUNICATION EQUIPMENT; PHOTOLUMINESCENCE; RADIATION EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTRON BEAM INDUCED CURRENTS (EBIC);

SEMICONDUCTOR LASERS;

EID: 0342810015     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.809681     Document Type: Article

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