Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation

IEEE Photonics Technology Letters

Volumn 11, Issue 1, 1999, Pages 3-5

  Jie, Wang Zhi ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

CVD; Insulation; Leakage currents; Oxidation; Quantum well lasers; Semiconductor heterjunctions; Thermal factors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATION; HETEROJUNCTIONS; HIGH TEMPERATURE APPLICATIONS; LEAKAGE CURRENTS; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES; THERMAL EFFECTS; THYRISTORS;

NATIVE OXIDE BURIED HETEROSTRUCTURE (NOBH) LASERS; THERMAL FACTORS;

QUANTUM WELL LASERS;

EID: 0032757689     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.736371     Document Type: Article

References (2)

1. H. S. Cho, D. H. Jang, K. H. Park, J. S. Kim, S. W. LEE, H. M. Kim, and H.-M. Park, "High performance strain-compensated multiple quantum well planar buried heterostructure laser with low leakage current," Jpn. J. Appl. Phys., vol. 35, pp. 1751-1757, 1996.
2. T. Ohtoshi and N. Chinone, "Suppression of leakage current in InGaAsP/InP buried heterostructure lasers by InAlAs strained current-blocking layers," Electron. Lett., vol. 27, pp. 12-13, 1991.