85 °C Investigation of uncooled 10-Gb/s directly modulated InGaAsP RWG GC-DFB lasers

IEEE Photonics Technology Letters

Volumn 13, Issue 8, 2001, Pages 773-775

  White, J K ^a   Blaauw, C ^a   Firth, P ^a   Aukland, P ^a  

^a NORTEL NETWORKS   (Canada)

Author keywords

Distributed feedback lasers; Intensity modulation; Quantum well lasers; Semiconductor lasers; Thermal factors

Indexed keywords

DAMPING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RELAXATION OSCILLATORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; TRANSMITTERS;

RELAXATION OSCILLATION FREQUENCIES;

DISTRIBUTED FEEDBACK LASERS;

EID: 0035423449     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.935799     Document Type: Article

References (6)

1. 85 °C C-10 Gb/s operation of 1.3 μn InGaAlAs MQW-DFB laser
2. 1.3 μm AlGaInAs lasers with 12.0 GHz relaxation oscillation frequency at 85 °C for gigabit ethernet system
3. Uncooled and directly modulated 1.3 μm DFB laser diode for serial 10 Gb/s ethernet
4. Ridge waveguide InGaAsP lasers with uncooled 10 Gb/s operation at 70 °C
5. 10 Gb/s transmission using directly modulated uncooled MQW ridge waveguide DFB lasers in TO package
6. Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers