Strain-compensated 1.3-μm AlGaInAs quantum-well lasers with multiquantum barriers at the cladding layers

IEEE Photonics Technology Letters

Volumn 11, Issue 1, 1999, Pages 9-11

  Pan, Jen Wei ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Multiple quantum barrier; Semiconductor lasers; Strain compensation

Indexed keywords

CLADDING (COATING); HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN;

GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE (GRINSCH); MULTIQUANTUM BARRIERS (MQB);

QUANTUM WELL LASERS;

EID: 0032756686     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.736373     Document Type: Article

References (4)

1. D. Garbuzou, L. Xu, S. R. Forrest, R. Menna, R. Martinelli, and J. C. Connolly, "1.5 μm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power," Electron. Lett., vol. 32, pp. 1717-1719, 1996.
2. R. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geels, and J. E. Bowers, "High speed quantum-well lasers and carrier transport effects," IEEE J. Quantum Electron., vol. 28, pp. 1990-2007, 1992.
3. A. A. Bernussi, H. Temkin, D. L. Coblentz, and R. A. Logan, "Effect of barrier recombination on the high temperature performance of quaternary multiquantum well lasers," Appl. Phys. Lett., vol. 66, pp. 67-69, 1995.
4. M. Irikawa, H. Shimizu, T. Fukushima, K. Nishikata, and Y. Hirayama, "Strained GaInAs-AlGaInAs 1.5-μm-wavelength multiquantum-well lasers loaded with GaInAs-AlInAs multiquantum barriers at the P-side optical confinement layer," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 285-291, 1995.