1.3-μm InAsP n-type modulation-doped MQW lasers grown by gas-source molecular beam epitaxy

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 449-456

  Shimizu, Hitoshi ^a,b   Kumada, Kouji ^a   Yamanaka, Nobumitsu ^a   Iwai, Nirihiro ^a   Mukaihara, Toshikazu ^a   Kasukawa, Akihiko ^a,c,d  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DATA COMMUNICATION SYSTEMS; LASER RESONATORS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL VARIABLES MEASUREMENT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

CAVITY LENGTH; DIFFERENTIAL GAIN; GAS SOURCE MOLECULAR BEAM EPITAXY; HETEROSTRUCTURE LASER; MODULATION DOPING; MULTIPLE QUANTUM WELL LASERS; PHOTOLUMINESCENCE SPECTRA; RELATIVE INTENSITY NOISE; THRESHOLD CURRENT DENSITY; TURN ON DELAY TIME;

SEMICONDUCTOR LASERS;

EID: 0033123898     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788404     Document Type: Article

References (25)

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