High-performance 1.3-μm InAsP strained-layer quantum-well ACIS (Al-oxide confined inner stripe) lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 694-700

  Iwai, N ^a   Mukaihara, T ^a   Yamanaka, N ^a   Kumada, K ^a   Shimizu, H ^a   Kasukawa, A ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL INTERCONNECTS; OPTIMIZATION; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; WAVEGUIDES;

ALUMINUM OXIDE CONFINED INNER STRIPE; RITGE WAVEGUIDES; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0033124035     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788437     Document Type: Article

References (27)

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