Effects of well number on temperature characteristics in 1.3-μm AlGaInAs-InP quantum-well lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 420-427

  Wada, Hiroshi ^a   Takemasa, Keizo ^a   Munakata, Tsutomu ^a   Kobayashi, Masao ^a   Kamijoh, Takeshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; LASER APPLICATIONS; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES;

TEMPERATURE CHARACTERISTICS; THRESHOLD CURRENT; WELL NUMBER EFFECTS;

SEMICONDUCTOR LASERS;

EID: 0033123785     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788400     Document Type: Article

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