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Materials Chemistry and Physics

Volumn 71, Issue 2, 2001, Pages 125-130

Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

(7) Ding, Shi Jin a Chen, Li b Wan, Xin Gong a Wang, Peng Fei a Zhang, Jian Yun a Zhang, David Wei a Wang, Ji Tao a

a FUDAN UNIVERSITY (China)

b BEIHANG UNIVERSITY (China)

Author keywords

Carbon and fluorine doped silicon oxide; Film; Low dielectric constant; Plasma enhanced chemical vapor deposition

Indexed keywords

AMORPHOUS FILMS; CAPACITANCE; CARBON; CHEMICAL BONDS; CROSSLINKING; ELECTRIC POTENTIAL; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICA; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

TETRAETHOXYSILANE;

SEMICONDUCTING FILMS;

EID: 0035881566 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(00)00530-7 Document Type: Article

Times cited : (12)

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