FTIR characterization of fluorine doped silicon dioxide thin films deposited by plasma enhanced chemical vapor deposition

Chinese Physics Letters

Volumn 17, Issue 12, 2000, Pages 912-914

  Wang, Pong Fei ^a   Ding, Shi Jin ^a   Zhang, Wei ^a   Zhang, Jian Yun ^a   Wang, Ji Tao ^a   Wei, William Lee ^b  

^a FUDAN UNIVERSITY   (China)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; LOW-K DIELECTRIC; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SILICA; SILICON OXIDES;

% REDUCTIONS; ABSORPTION PEAKS; BLUE SHIFT; FLUORINE-DOPED SILICON DIOXIDES; FOURIER TRANSFORM INFRARED; IONIC POLARIZATION; PARTIAL CHARGES; SPECTRA'S; STRUCTURE CHANGE; THIN-FILMS;

THIN FILMS;

EID: 0034558058     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/17/12/020     Document Type: Article

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